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27 February 2014 Hybrid III-V on silicon lasers for photonic integrated circuits on silicon
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Abstract
Silicon photonics is attracting large attention due to the promise of fabricating low-cost, compact circuits that integrate photonic and microelectronic elements. It can address a wide range of applications from short distance data communication to long haul optical transmission. Today, practical Si-based light sources are still missing, despite the recent demonstration of an optically pumped germanium laser. This situation has driven research to the heterogeneous integration of III-V semiconductors on silicon through wafer bonding techniques. This paper reports on recent advances on integrated hybrid InP/SOI lasers and transmitters using a wafer bonding technique made in particular at III-V Lab, France.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guang-Hua Duan, Christophe Jany, Alban Le Liepvre, Alain Accard, Marco Lamponi, Dalila Make, Peter Kaspar, Guillaume Levaufre, Nils Girard, François Lelarge, Jean-Marc Fedeli, Sonia Messaoudene, Damien Bordel, and Segolene Olivier "Hybrid III-V on silicon lasers for photonic integrated circuits on silicon", Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90020X (27 February 2014); https://doi.org/10.1117/12.2044258
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