Hybrid III-V on silicon lasers for photonic integrated circuits on silicon

Guang-Hua Duan; Christophe Jany; Alban Le Liepvre; Alain Accard; Marco Lamponi; Dalila Make; Peter Kaspar; Guillaume Levaufre; Nils Girard; François Lelarge; Jean-Marc Fedeli; Sonia Messaoudene; Damien Bordel; Segolene Olivier

doi:10.1117/12.2044258

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27 February 2014 Hybrid III-V on silicon lasers for photonic integrated circuits on silicon

Guang-Hua Duan, Christophe Jany, Alban Le Liepvre, Alain Accard, Marco Lamponi, Dalila Make, Peter Kaspar, Guillaume Levaufre, Nils Girard, François Lelarge, Jean-Marc Fedeli, Sonia Messaoudene, Damien Bordel, Segolene Olivier

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Proceedings Volume 9002, Novel In-Plane Semiconductor Lasers XIII; 90020X (2014) https://doi.org/10.1117/12.2044258
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Silicon photonics is attracting large attention due to the promise of fabricating low-cost, compact circuits that integrate photonic and microelectronic elements. It can address a wide range of applications from short distance data communication to long haul optical transmission. Today, practical Si-based light sources are still missing, despite the recent demonstration of an optically pumped germanium laser. This situation has driven research to the heterogeneous integration of III-V semiconductors on silicon through wafer bonding techniques. This paper reports on recent advances on integrated hybrid InP/SOI lasers and transmitters using a wafer bonding technique made in particular at III-V Lab, France.

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Guang-Hua Duan, Christophe Jany, Alban Le Liepvre, Alain Accard, Marco Lamponi, Dalila Make, Peter Kaspar, Guillaume Levaufre, Nils Girard, François Lelarge, Jean-Marc Fedeli, Sonia Messaoudene, Damien Bordel, and Segolene Olivier "Hybrid III-V on silicon lasers for photonic integrated circuits on silicon", Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90020X (27 February 2014); https://doi.org/10.1117/12.2044258

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