Ultra-low input power long-wavelength GaSb type-I laser diodes at 2.7-3.0 µm

Augustinas Vizbaras; Mindaugas Greibus; Edgaras Dvinelis; Augustinas Trinkūnas; Deividas Kovalenkovas; Ieva Šimonytė; Kristijonas Vizbaras

doi:10.1117/12.2036528

27 February 2014 Ultra-low input power long-wavelength GaSb type-I laser diodes at 2.7-3.0 μm

Augustinas Vizbaras, Mindaugas Greibus, Edgaras Dvinelis, Augustinas Trinkūnas, Deividas Kovalenkovas, Ieva Šimonytė, Kristijonas Vizbaras

Author Affiliations +

Proceedings Volume 9002, Novel In-Plane Semiconductor Lasers XIII; 900214 (2014) https://doi.org/10.1117/12.2036528
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Mid-infrared spectral region (2-4 μm) is gaining significant attention recently due to the presence of numerous enabling applications in the field of gas sensing, medical, environmental and defense applications. Major requirement for these applications is the availability of laser sources in this spectral window. Type-I GaSb-based laser diodes are ideal candidates for these applications being compact, electrically pumped, power efficient and able to operate at room temperature in continuous-wave. Moreover, due to the nature of type-I transition; these devices have a characteristic low operation voltage, typically below 1 V, resulting in low power consumption, and high-temperature of operation. In this work, we present recent progress of 2.7 μm – 3.0 μm wavelength single-spatial mode GaSb type-I laser diode development at Brolis Semiconductors. Experimental device structures were grown by solid-source multi-wafer MBE, consisting of an active region with 2 compressively strained (~1.3 %-1.5 %) GaInAsSb quantum wells with GaSb barriers for 2.7 μm devices and quinternary AlGaInAsSb barriers for 3.0 μm devices. Epi-wafers were processed into a narrow-ridge (2-4 μm) devices and mounted p-side up on CuW heatsink. Devices exhibited very low CW threshold powers of < 100 mW, and single spatial mode (TE00) operation with room-temperature output powers up to 40 mW in CW mode. Operating voltage was as low as 1.2 V at 1.2 A. As-cleaved devices worked CW up to 50 deg C.

Citation Download Citation

Augustinas Vizbaras, Mindaugas Greibus, Edgaras Dvinelis, Augustinas Trinkūnas, Deividas Kovalenkovas, Ieva Šimonytė, and Kristijonas Vizbaras "Ultra-low input power long-wavelength GaSb type-I laser diodes at 2.7-3.0 μm", Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 900214 (27 February 2014); https://doi.org/10.1117/12.2036528

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available