27 February 2014 2-micron GaSb-based metamorphic laser grown on GaAs
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Abstract
We report GaSb-based broad-area (BA) lasers, ridge-waveguide (RWG) lasers and laterally coupled distributedfeedback (LC-DFB) lasers grown metamorphically on GaAs substrates. Despite the large lattice mismatch, a high crystal quality laser structure was achieved. All lasers operate continuous-wave at room temperature with emission wavelengths near 2-μm. BA lasers emit total output power up to 70 mW at 15°C with low internal loss and low thermal resistance compared to those of pseudomorphic lasers. Single lateral mode RWG lasers demonstrate stable output power over a 1000-hour test and operate continuous-wave up to 70°C. LC-DFB lasers emit total output power of up to 49 mW in a single longitudinal mode and side-mode suppression ratio of 25 dB at a heat-sink temperature of 15°C.
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Paveen Apiratikul, Paveen Apiratikul, Lei He, Lei He, Richard P. Leavitt, Richard P. Leavitt, Nathan P. Siwak, Nathan P. Siwak, Joseph Duperre, Joseph Duperre, Christopher J. K. Richardson, Christopher J. K. Richardson, } "2-micron GaSb-based metamorphic laser grown on GaAs", Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 900216 (27 February 2014); doi: 10.1117/12.2042004; https://doi.org/10.1117/12.2042004
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