27 February 2014 2-micron GaSb-based metamorphic laser grown on GaAs
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Abstract
We report GaSb-based broad-area (BA) lasers, ridge-waveguide (RWG) lasers and laterally coupled distributedfeedback (LC-DFB) lasers grown metamorphically on GaAs substrates. Despite the large lattice mismatch, a high crystal quality laser structure was achieved. All lasers operate continuous-wave at room temperature with emission wavelengths near 2-μm. BA lasers emit total output power up to 70 mW at 15°C with low internal loss and low thermal resistance compared to those of pseudomorphic lasers. Single lateral mode RWG lasers demonstrate stable output power over a 1000-hour test and operate continuous-wave up to 70°C. LC-DFB lasers emit total output power of up to 49 mW in a single longitudinal mode and side-mode suppression ratio of 25 dB at a heat-sink temperature of 15°C.
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Paveen Apiratikul, Lei He, Richard P. Leavitt, Nathan P. Siwak, Joseph Duperre, Christopher J. K. Richardson, "2-micron GaSb-based metamorphic laser grown on GaAs", Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 900216 (27 February 2014); doi: 10.1117/12.2042004; https://doi.org/10.1117/12.2042004
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