Translator Disclaimer
27 February 2014 2-micron GaSb-based metamorphic laser grown on GaAs
Author Affiliations +
We report GaSb-based broad-area (BA) lasers, ridge-waveguide (RWG) lasers and laterally coupled distributedfeedback (LC-DFB) lasers grown metamorphically on GaAs substrates. Despite the large lattice mismatch, a high crystal quality laser structure was achieved. All lasers operate continuous-wave at room temperature with emission wavelengths near 2-μm. BA lasers emit total output power up to 70 mW at 15°C with low internal loss and low thermal resistance compared to those of pseudomorphic lasers. Single lateral mode RWG lasers demonstrate stable output power over a 1000-hour test and operate continuous-wave up to 70°C. LC-DFB lasers emit total output power of up to 49 mW in a single longitudinal mode and side-mode suppression ratio of 25 dB at a heat-sink temperature of 15°C.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paveen Apiratikul, Lei He, Richard P. Leavitt, Nathan P. Siwak, Joseph Duperre, and Christopher J. K. Richardson "2-micron GaSb-based metamorphic laser grown on GaAs", Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 900216 (27 February 2014);


AlGaInP single quantum well laser diodes
Proceedings of SPIE (April 17 1995)
High-power mid-IR type-II interband cascade lasers
Proceedings of SPIE (July 18 2000)
Blue/green laser diodes based on ZnMgSSe
Proceedings of SPIE (December 21 1994)

Back to Top