27 February 2014 Quantum band engineering of nitride semiconductors for infrared lasers
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Abstract
The III-nitride semiconductors have been proposed as candidate materials for new quantum cascade lasers in the nearinfrared (1.5-3 μm), and far-infrared (30-60 μm), due to the large conduction-band offset between GaN and Alcontaining alloys (>1 eV), and the large longitudinal optical (LO) phonon energy (90 meV), respectively. The challenges of III-nitride intersubband devices are twofold: material and design related. Due to large electron effective mass, the nitride intersubband materials require the ability to fine-tune the atomic structure at an unprecedented sub-nanometer level. Moreover, the III-N materials exhibit built-in polarization fields that complicate the design of intersubband lasers. This paper presents recent results on c-plane nitride resonant-tunneling diodes that are important for the prospects of farinfrared nitride lasers. We also report near-infrared absorption and photocurrent measurements in nonpolar (m-plane) AlGaN/GaN superlattices.
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O. Malis, O. Malis, C. Edmunds, C. Edmunds, D. Li, D. Li, J. Shao, J. Shao, G. Gardner, G. Gardner, W. Li, W. Li, P. Fay, P. Fay, M. J. Manfra, M. J. Manfra, } "Quantum band engineering of nitride semiconductors for infrared lasers", Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90021D (27 February 2014); doi: 10.1117/12.2036286; https://doi.org/10.1117/12.2036286
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