27 February 2014 Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light-emitting diodes
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We have developed phosphor-free InGaN/GaN/AlGaN dot-in-a-wire core-shell white light emitting diodes, which can break the carrier injection efficiency bottleneck of conventional nanowire white light emitting diodes, leading to a dramatic enhancement of the output power. Additionally, such phosphor-free nanowire white light emitting diodes can deliver a very high color rendering index (CRI) of ~92-98.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zetian Mi, Zetian Mi, Hieu Pham Trung Nguyen, Hieu Pham Trung Nguyen, Shaofei Zhang, Shaofei Zhang, Ashfiqua T. Connie, Ashfiqua T. Connie, Md Golam Kibria, Md Golam Kibria, Qi Wang, Qi Wang, Ishiang Shih, Ishiang Shih, "Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light-emitting diodes", Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 900306 (27 February 2014); doi: 10.1117/12.2041284; https://doi.org/10.1117/12.2041284


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