27 February 2014 Comprehensive study of internal quantum efficiency of high-brightness GaN-based light-emitting diodes by temperature-dependent electroluminescence method
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Abstract
We report on the development of a temperature-dependent electroluminescence experimental setup for characterizing the internal quantum efficiency (IQE) of high-brightness GaN-based light-emitting diodes (LEDs). A systematic IQE study of commercial LED chips from major LED manufacturers (including Cree, Nichia, Osram, and Sanan) is presented. The chips show distinctive temperature- and current-dependence in the IQE behavior. Analysis to correlate the onset of droop with the onset of high injection is also presented.
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Yaqi Wang, Mengshu Pan, Ting Li, "Comprehensive study of internal quantum efficiency of high-brightness GaN-based light-emitting diodes by temperature-dependent electroluminescence method", Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 90030D (27 February 2014); doi: 10.1117/12.2040710; https://doi.org/10.1117/12.2040710
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