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27 February 2014 Improvement of carrier distribution by using thinner quantum well with different location
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We use thinner-quantum well to improve the droop behavior of GaN-base light emitting diode in simulation. Taking the advantage of that the thin quantum well will saturate easily, this characteristic of thin well will improve carrier distribution. Furthermore, this structure has more wave-function overlap than that of the thick well. This simulation result showed that decreasing the well thickness in specific position will not only improve the holes transport but also increase the quantum efficiency at high current density in the active region, and the efficiency droop behavior can be effectively suppressed. In this research, we designed three thin well structures by inserting different numbers of thin wells in the active region. We have compared them to the conventional LEDs, for which, the well thickness of 2.5 nm is used. The thin well structures have better droop behavior than conventional LED.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sheng-Wen Wang, Da-Wei Lin, Chia-Yu Lee, Chien-Chung Lin, and Hao-Chung Kuo "Improvement of carrier distribution by using thinner quantum well with different location", Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 90030F (27 February 2014);


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