27 February 2014 The performance of GaN LEDs using an embedded finger-type contact
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High performance of GaN light-emitting diodes with a finger-type embedded contact (F-LEDs) was demonstrated on a Cu substrate for improved thermal management and increased efficiency. In contrast to common sapphire-based LEDs (C-LEDs) and the wing-type embedded LEDs (W-LEDs), the use of the finger-type embedded contact not only reduces the effect of the current crowding of W-LEDs to achieve a uniform current injection but also eliminates the problem of light shading of C-LEDs to obtain more output power. At 350 mA, the output power of the three LEDs was measured to be 329.39, 284.52, and 236.38 mW for the C-LED, W-LED, and F-LED, respectively; representing that the F-LED in output intensity was raised 39.3% and 20.3% higher than that in the C-LED and the W-LED. Similarly, a 63.61% increase of output power of F-LED was obtained as compared to the C-LED case at 700 mA current injection. At this point, the efficiency droop of F-LED is 33.7%, which is lower than that of 44.1% and 53.5% in W-LED and C-LED, respectively; results are promising for the development of high performance LEDs using the finger-type embedded contact.
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Ray-Hua Horng, Ray-Hua Horng, Kun-Ching Shen, Kun-Ching Shen, Chao-Yu Pai, Chao-Yu Pai, Dong-Sing Wuu, Dong-Sing Wuu, "The performance of GaN LEDs using an embedded finger-type contact", Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 90030O (27 February 2014); doi: 10.1117/12.2037274; https://doi.org/10.1117/12.2037274


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