27 February 2014 High-efficiency green light-emitting diodes based on InGaN-ZnGeN2 type-II quantum wells
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Abstract
Strain-compensated type-II InGaN-ZnGeN2-AlGaN quantum wells (QWs) are studied as improved active regions for light-emitting diodes (LEDs). Both the band gap and the lattice parameters of ZnGeN2 are very close to those of GaN. The recently predicted large band offset between GaN and ZnGeN2 allows the formation of a type-II heterostructure. The deep confinement of holes in the ZnGeN2 layer allows the use of a low In-content InGaN QW to extend the emission wavelength into the green wavelength region. A thin layer of AlGaN surrounding the QW is used as a strain compensation layer. Simulation studies of the proposed type-II QW indicate an enhancement of 5.6-6.8 times the spontaneous emission rate compared to InGaN-GaN QWs emitting in the green wavelength region.
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Lu Han, Kathleen Kash, Hongping Zhao, "High-efficiency green light-emitting diodes based on InGaN-ZnGeN2 type-II quantum wells", Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 90030W (27 February 2014); doi: 10.1117/12.2038756; https://doi.org/10.1117/12.2038756
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