27 February 2014 Identification of Auger effect as the dominant mechanism for efficiency droop of LEDs
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Abstract
We discuss the unambiguous detection of Auger electrons by electron emission (EE) spectroscopy from a cesiated InGaN/GaN light-emitting diode (LED) under electrical injection. Electron emission spectra were measured as a function of the current injected in the device. The appearance of high-energy electron peaks simultaneously with the droop in LED efficiency shows that hot carriers are being generated in the active region (InGaN quantum wells) by an Auger process. A linear correlation was measured between the high energy emitted electron current and the “droop current” - the missing component of the injected current for light emission. We conclude that the droop originates from the onset of Auger processes. We compare such a direct identification of the droop mechanism with other identifications, most of them indirect and based on the many-parameter modeling of the dependence of the external quantum efficiency on the carrier injection.
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Jacques Peretti, Claude Weisbuch, Justin Iveland, Marco Piccardo, Lucio Martinelli, James S. Speck, "Identification of Auger effect as the dominant mechanism for efficiency droop of LEDs", Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 90030Z (27 February 2014); doi: 10.1117/12.2038698; https://doi.org/10.1117/12.2038698
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