27 February 2014 Study of grating layer location of a GaN nano-grated LED for improvement of transmission efficiency
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Abstract
We study nano-grated surface GaN LED to improve light extraction efficiency by optimizing the device parameters. Our study is based on rigorous coupled wave analysis (RCWA) to obtain total transmission across a device. Our simulation results allow us to optimize the device parameters to maximize light extraction efficiency. We simulate our device using a two-dimensional model with square-grating cells in a crystal lattice arrangement whose parameters we define as follows: grating cell period (Λ), grating cell height (d), and grating cell width (ω). We also define grating layer location (L) as the distance between the multi-quantum wells (MQW) source and the grating surface layer. Each simulation varies in grating cell period, grating cell width, and grating layer location and provides a result of total transmission across the device. These results are used to calculate improvement over the non-grated surface GaN LED. Our preliminary study focused on 50% fill factor and showed that location of the grating as well as the grating period both strongly effect the total transmission across the device. In addition, we noticed that optimizing the surface grating location might affect the total transmission. Our study allowed us to improve the light extraction efficiency of nano-grated GaN LED by an average of 133% when fill factor is 50%. We also present our study in detail which includes fill factors ranging between 0 to 100%.
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Ashli Behill, Gabriela Aleman, Xiaomin Jin, Xiang-Ning Kang, Guo-Yi Zhang, "Study of grating layer location of a GaN nano-grated LED for improvement of transmission efficiency", Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 90031J (27 February 2014); doi: 10.1117/12.2038014; https://doi.org/10.1117/12.2038014
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