27 February 2014 Estimation of carrier leakage in InGaN light emitting diodes from photocurrent measurements
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Abstract
Carrier transport in double heterostructure (DH) InGaN light emitting diodes (LEDs) was investigated using photocurrent measurements performed under CW HeCd laser (325 nm wavelength) excitation. The effect of electron injector thicknesses was investigated by monitoring the excitation density and applied bias dependent escape of photogenerated carriers from the active region and through energy band structure and carrier transport simulations using Silvaco Atlas. For quad (4x) 3-nm DH LED structures incorporating staircase electron injectors (SEIs), photocurrent increased with SEI thickness due to reduced effective barrier opposing carrier escape from the active region as confirmed by simulations. The carrier leakage percentile at -3V bias and 280 Wcm-2 optical excitation density increased from 24 % to 55 % when In 0.04Ga0.96N + In0.08Ga0.92N SEI thickness was increased from 4 nm + 4 nm to 30 nm + 30 nm. The increased leakage with thicker SEI correlates with increased carrier overflow under forward bias.
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Shopan Hafiz, Fan Zhang, Morteza Monavarian, Serdal Okur, Vitaliy Avrutin, Hadis Morkoç, Ümit Özgür, "Estimation of carrier leakage in InGaN light emitting diodes from photocurrent measurements", Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 90031R (27 February 2014); doi: 10.1117/12.2040926; https://doi.org/10.1117/12.2040926
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