25 February 2014 Investigation of the effects of deposition parameters on indium-free transparent amorphous oxide semiconductor thin-film transistors fabricated at low temperatures for flexible electronic applications
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Proceedings Volume 9005, Advances in Display Technologies IV; 90050D (2014) https://doi.org/10.1117/12.2041028
Event: SPIE OPTO, 2014, San Francisco, California, United States
Abstract
Low temperature gallium tin zinc oxide (GSZO) based thin film transistors fabricated on silicon has been investigated as a potential indium free transparent amorphous oxide semiconductor thin film transistor (TAOS TFT) with potential device applications on plastic substrates. A comprehensive and detailed study on the performance of GSZO TFTs has been carried out by studying the effects of processing parameters such as deposition temperature and annealing temperature/duration, as well as the channel thickness with all temperatures held below 150 °C. Variety of characterization techniques, namely Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS) and x-ray reflectivity (XRR) in addition to I-V and C-V measurements were employed to determine the effects of the above parameters on the composition and quality of the channel. Optimized TFT characteristics of ID=3×10-7 A, ION/OFF =2×106, VON ~ -2 V, SS ~ 1 V/dec and μFE = 0.14 cm2/V· s with a ΔVON of 3.3 V under 3 hours electrical stress were produced.
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Robert Alston, Shanthi Iyer, Tanina Bradley, Jay Lewis, Garry Cunningham, Eric Forsythe, "Investigation of the effects of deposition parameters on indium-free transparent amorphous oxide semiconductor thin-film transistors fabricated at low temperatures for flexible electronic applications", Proc. SPIE 9005, Advances in Display Technologies IV, 90050D (25 February 2014); doi: 10.1117/12.2041028; https://doi.org/10.1117/12.2041028
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