Investigation of the effects of deposition parameters on indium-free transparent amorphous oxide semiconductor thin-film transistors fabricated at low temperatures for flexible electronic applications

Robert Alston; Shanthi Iyer; Tanina Bradley; Jay Lewis; Garry Cunningham; Eric Forsythe

doi:10.1117/12.2041028

25 February 2014 Investigation of the effects of deposition parameters on indium-free transparent amorphous oxide semiconductor thin-film transistors fabricated at low temperatures for flexible electronic applications

Robert Alston, Shanthi Iyer, Tanina Bradley, Jay Lewis, Garry Cunningham, Eric Forsythe

Author Affiliations +

Proceedings Volume 9005, Advances in Display Technologies IV; 90050D (2014) https://doi.org/10.1117/12.2041028
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Low temperature gallium tin zinc oxide (GSZO) based thin film transistors fabricated on silicon has been investigated as a potential indium free transparent amorphous oxide semiconductor thin film transistor (TAOS TFT) with potential device applications on plastic substrates. A comprehensive and detailed study on the performance of GSZO TFTs has been carried out by studying the effects of processing parameters such as deposition temperature and annealing temperature/duration, as well as the channel thickness with all temperatures held below 150 °C. Variety of characterization techniques, namely Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS) and x-ray reflectivity (XRR) in addition to I-V and C-V measurements were employed to determine the effects of the above parameters on the composition and quality of the channel. Optimized TFT characteristics of I_D=3×10^-7 A, I_ON/OFF =2×10⁶, VON ~ -2 V, SS ~ 1 V/dec and μ_FE = 0.14 cm²/V· s with a ΔV_ON of 3.3 V under 3 hours electrical stress were produced.

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Robert Alston, Robert Alston, Shanthi Iyer, Shanthi Iyer, Tanina Bradley, Tanina Bradley, Jay Lewis, Jay Lewis, Garry Cunningham, Garry Cunningham, Eric Forsythe, Eric Forsythe, "Investigation of the effects of deposition parameters on indium-free transparent amorphous oxide semiconductor thin-film transistors fabricated at low temperatures for flexible electronic applications", Proc. SPIE 9005, Advances in Display Technologies IV, 90050D (25 February 2014); doi: 10.1117/12.2041028; https://doi.org/10.1117/12.2041028

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