Investigation of the effects of deposition parameters on indium-free transparent amorphous oxide semiconductor thin-film transistors fabricated at low temperatures for flexible electronic applications

Robert Alston; Shanthi Iyer; Tanina Bradley; Jay Lewis; Garry Cunningham; Eric Forsythe

doi:10.1117/12.2041028

Translator Disclaimer

25 February 2014 Investigation of the effects of deposition parameters on indium-free transparent amorphous oxide semiconductor thin-film transistors fabricated at low temperatures for flexible electronic applications

Robert Alston; Shanthi Iyer; Tanina Bradley; Jay Lewis; Garry Cunningham; Eric Forsythe

Author Affiliations +

Proceedings Volume 9005, Advances in Display Technologies IV; 90050D (2014) https://doi.org/10.1117/12.2041028
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Low temperature gallium tin zinc oxide (GSZO) based thin film transistors fabricated on silicon has been investigated as a potential indium free transparent amorphous oxide semiconductor thin film transistor (TAOS TFT) with potential device applications on plastic substrates. A comprehensive and detailed study on the performance of GSZO TFTs has been carried out by studying the effects of processing parameters such as deposition temperature and annealing temperature/duration, as well as the channel thickness with all temperatures held below 150 °C. Variety of characterization techniques, namely Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS) and x-ray reflectivity (XRR) in addition to I-V and C-V measurements were employed to determine the effects of the above parameters on the composition and quality of the channel. Optimized TFT characteristics of I_D=3×10^-7 A, I_ON/OFF =2×10⁶, VON ~ -2 V, SS ~ 1 V/dec and μ_FE = 0.14 cm²/V· s with a ΔV_ON of 3.3 V under 3 hours electrical stress were produced.

Citation Download Citation

Robert Alston, Shanthi Iyer, Tanina Bradley, Jay Lewis, Garry Cunningham, and Eric Forsythe "Investigation of the effects of deposition parameters on indium-free transparent amorphous oxide semiconductor thin-film transistors fabricated at low temperatures for flexible electronic applications", Proc. SPIE 9005, Advances in Display Technologies IV, 90050D (25 February 2014); https://doi.org/10.1117/12.2041028

ACCESS THE FULL ARTICLE