Ultra-high speed video capturing of time dependent dielectric breakdown of metal-oxide-silicon capacitor up to 10M frame per second

F. Shao; D. Kimoto; K. Furukawa; H. Sugo; T. Takeda; K. Miyauchi; Y. Tochigi; R. Kuroda; S. Sugawa

doi:10.1117/12.2040859

4 March 2014 Ultra-high speed video capturing of time dependent dielectric breakdown of metal-oxide-silicon capacitor up to 10M frame per second

F. Shao, D. Kimoto, K. Furukawa, H. Sugo, T. Takeda, K. Miyauchi, Y. Tochigi, R. Kuroda, S. Sugawa

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Proceedings Volume 9022, Image Sensors and Imaging Systems 2014; 902205 (2014) https://doi.org/10.1117/12.2040859
Event: IS&T/SPIE Electronic Imaging, 2014, San Francisco, California, United States

Abstract

In this paper, the ultra-high speed (UHS) video capturing results of time dependent dielectric breakdown (TDDB) of MOS capacitors using the UHS camera with the maximum frame rate of 10M frame per second (fps) are reported. In order to capture the breakdown, we set a trigger circuit which detects the rapid current increase through the MOS capacitor. Some movies have succeeded to capture the intermittent light emissions on some points of the gate during the breakdown. From the movies taken at 100K to 1M fps, the distribution centers of the light emission time and the period were 10 sec and 30 μsec, respectively. From the movies taken at 10M fps, the light emission time and the period were less than 10 μsec. The random failure mode has higher percentage of single light emissions than that of the wear-out failure mode, indicating a correlation between of the light emission mode and the TDDB failure mode.

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F. Shao, F. Shao, D. Kimoto, D. Kimoto, K. Furukawa, K. Furukawa, H. Sugo, H. Sugo, T. Takeda, T. Takeda, K. Miyauchi, K. Miyauchi, Y. Tochigi, Y. Tochigi, R. Kuroda, R. Kuroda, S. Sugawa, S. Sugawa, "Ultra-high speed video capturing of time dependent dielectric breakdown of metal-oxide-silicon capacitor up to 10M frame per second", Proc. SPIE 9022, Image Sensors and Imaging Systems 2014, 902205 (4 March 2014); doi: 10.1117/12.2040859; https://doi.org/10.1117/12.2040859

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