21 December 2013 Optical poperty of Eu-doped ZnO films
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Proceedings Volume 9047, 2013 International Conference on Optical Instruments and Technology: Micro/Nano Photonics and Fabrication; 90470E (2013); doi: 10.1117/12.2036513
Event: International Conference on Optical Instruments and Technology (OIT2013), 2013, Beijing, China
Abstract
Photoluminescence properties of Eu-doped ZnO grown by radio frequency magnetron sputtering technique are investigated. Under the UV light excitation, Eu3+-related red emissions are observed, which reveals that an energy transfer exists from the ZnO host to the Eu3+ ions. By carrying out temperature dependent behavior of the time-resolved photoluminescence, we confirm the lifetime is likely associated with transitions including both temperature insensitive radiative decay and temperature sensitive non-radiative decay mechanisms. So a rate-equation model is used to analyze the population dynamics and the transitions between different states and decay constants for the relaxation processes are obtained. The study suggests that the energy transfer efficiency from the ZnO host to the Eu3+ ions is reduced above 80 K.
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Honghong Yang, Xiaoyun Teng, Wei Yu, Zicai Zhang, Xiaowei Li, "Optical poperty of Eu-doped ZnO films", Proc. SPIE 9047, 2013 International Conference on Optical Instruments and Technology: Micro/Nano Photonics and Fabrication, 90470E (21 December 2013); doi: 10.1117/12.2036513; http://dx.doi.org/10.1117/12.2036513
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KEYWORDS
Zinc oxide

Energy transfer

Ions

Luminescence

Europium

Sputter deposition

Excitons

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