21 December 2013 Reactive ion etching and OES endpoint detection of AlCu thin film
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Proceedings Volume 9047, 2013 International Conference on Optical Instruments and Technology: Micro/Nano Photonics and Fabrication; 90470K (2013) https://doi.org/10.1117/12.2042642
Event: International Conference on Optical Instruments and Technology (OIT2013), 2013, Beijing, China
Abstract
Patterning of AlCu alloy thin films is a key technology in MEMS fabrication. In this paper, reactive ion etching (RIE) process of Al-1%Cu films was described using BCl3 and Cl2 as etching gases and N2 and CH4 as neutral gases. A four-step process was presented to meet the etching requirements using BCl3, Cl2, N2 and CF4 as process gases. Optical emission spectroscopy (OES) was used to monitor the state of the plasma in real time. The etching endpoint was detected by detecting the spectral intensity change in the wavelength range of 395 ~ 400nm.
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Jun Gou, Jun Gou, Hui Ling Tai, Hui Ling Tai, Jun Wang, Jun Wang, Xiong Bang Wei, Xiong Bang Wei, Ya Dong Jiang, Ya Dong Jiang, } "Reactive ion etching and OES endpoint detection of AlCu thin film", Proc. SPIE 9047, 2013 International Conference on Optical Instruments and Technology: Micro/Nano Photonics and Fabrication, 90470K (21 December 2013); doi: 10.1117/12.2042642; https://doi.org/10.1117/12.2042642
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