17 April 2014 Investigation of novel inorganic resist materials for EUV lithography
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Recently, both PSI1 and ASML2 illustrated champion EUVL resolution using slow, non-chemically amplified inorganic resists. However, the requirements for EUVL manufacturing require simultaneous delivery of high resolution, good sensitivity, and low line edge/width roughness (LER/LWR) on commercial grade hardware. As a result, we believe that new classes of materials should be explored and understood. This paper focuses on our efforts to assess metal oxide based nanoparticles as novel EUV resists3. Various spectroscopic techniques were used to probe the patterning mechanism of these materials. EUV exposure data is presented to investigate the feasibility of employing inorganic materials as viable EUV resists.
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Marie E. Krysak, Marie E. Krysak, James M. Blackwell, James M. Blackwell, Steve E. Putna, Steve E. Putna, Michael J. Leeson, Michael J. Leeson, Todd R. Younkin, Todd R. Younkin, Shane Harlson, Shane Harlson, Kent Frasure, Kent Frasure, Florian Gstrein, Florian Gstrein, "Investigation of novel inorganic resist materials for EUV lithography", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 904805 (17 April 2014); doi: 10.1117/12.2046677; https://doi.org/10.1117/12.2046677

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