Stochastic effects in fabrication of 11nm line-and-space patterns using extreme ultraviolet lithography

Takahiro Kozawa; Julius Joseph Santillan; Toshiro Itani

doi:10.1117/12.2046225

17 April 2014 Stochastic effects in fabrication of 11nm line-and-space patterns using extreme ultraviolet lithography

Takahiro Kozawa, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 9048, Extreme Ultraviolet (EUV) Lithography V; 904806 (2014) https://doi.org/10.1117/12.2046225
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

The suppression of stochastic effects such as line edge roughness (LER) and stochastic defect generation is required for the realization of high volume production of semiconductor devices with 11 nm critical dimension using extreme ultraviolet (EUV) lithography. In this study, the effect of the molecular weight and protection ratio of the resist polymer on LER and stochastic defect generation was investigated. By increasing the molecular weight, LER and the probability for the stochastic defect generation were decreased. The negative effect caused by the increase of molecular weight is the increase of the minimum block size for dissolution in the development process. By increasing the protection ratio, the similar effect was expected. However, LER and the probability for the stochastic defect generation were not significantly decreased by increasing the protection ratio because of the decrease of quantum efficiency of acid generation caused by the protection of proton sources. The development of protecting group that does not affect the quantum efficiency is essential to decrease the stochastic effects.

Citation Download Citation

Takahiro Kozawa, Julius Joseph Santillan, and Toshiro Itani "Stochastic effects in fabrication of 11nm line-and-space patterns using extreme ultraviolet lithography", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 904806 (17 April 2014); https://doi.org/10.1117/12.2046225

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