17 April 2014 Understanding EUV resist mottling leading to better resolution and linewidth roughness
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Abstract
We have shown that the dissolution properties can be successfully modified to improve the line/space profile and LWR of a low diffusion EUV CA resist. The surface roughness is a function of hot spots in the nominally unexposed regions of the resist material. We conjecture that the photoacid hot spots are formed due to DC flare present in the optical train of the exposure system. We also have shown that the PAGs can be further improved for out-of-band radiation (OOB) response. The improvement can be as much as 557% for 193nm exposure, and 838% by 248nm exposure. The improved OOB response leads to better contact hole performance. We also shared our continued improvement in resist witness plate performance with the majority of our resists passing for carbon growth, and all samples passing for non-cleanables. There does appear to be a site-to-site bias which we attribute to differences between e-beam and EUV exposure and/or substrate working distance from the source. Lastly, we show outstanding lithographic process window for 24 nm contact arrays on an NXE 3300 stepper as well as 15 nm half pitch lines and spaces on the PSI interferometric tool.
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James Thackeray, James Cameron, Vipul Jain, Paul LaBeaume, Suzanne Coley, Owendi Ongayi, Mike Wagner, John Biafore, Jun Sung Chun, "Understanding EUV resist mottling leading to better resolution and linewidth roughness", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 904807 (17 April 2014); doi: 10.1117/12.2046392; https://doi.org/10.1117/12.2046392
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