17 April 2014 EUV source-mask optimization for 7nm node and beyond
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Proceedings Volume 9048, Extreme Ultraviolet (EUV) Lithography V; 90480Q (2014); doi: 10.1117/12.2047584
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States
In this paper we introduce new source-mask co-optimization (SMO) capabilities for EUV with specific support of the details of imaging with NXE:33×0 scanners. New algorithms have been developed that fully exploit the adjustability of the light distribution inside the NXE:33×0 flexible illuminator, FlexPupil. The fast NXE M3D+ model accurately predicts the reflective 3D mask effects and enables novel pupil symmetries and mask defocus optimization. This mitigates the H-V bias, Bossung tilt, and pattern shift caused by shadowing and non-telecentricity, and reduces the sensitivity to flare. New pupil optimization flows will be shown. The optimized pupils are fully compliant with NXE:33×0 scanner specifications. We will demonstrate enhanced imaging performance of this NXE specific SMO on 7 nm node logic cut masks and show benefits up to 20% improved CD uniformity, and a reduction in the maximum pattern shifts.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaofeng Liu, Rafael Howell, Stephen Hsu, Kaiyu Yang, Keith Gronlund, Frank Driessen, Hua-Yu Liu, Steven Hansen, Koen van Ingen Schenau, Thijs Hollink, Paul van Adrichem, Kars Troost, Jörg Zimmermann, Oliver Schumann, Christoph Hennerkes, Paul Gräupner, "EUV source-mask optimization for 7nm node and beyond", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90480Q (17 April 2014); doi: 10.1117/12.2047584; https://doi.org/10.1117/12.2047584


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