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17 April 2014 EUV overlay strategy for improving MMO
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Abstract
EUV lithography (EUVL) is the most promising technology to extend the resolution limit, and is expected to be used if the enough source power is delivered and mask defect mitigation method is developed. However, even in that case, the number of EUV steps will be restricted by its high cost, and ArF immersion will still take a major role in the chip manufacturing. Therefore, it is important to check and improve the mix-match overlay (MMO) between EUV and ArF immersion steps. In this paper, we evaluate EUV MMO with ArF immersion system by comparing with dedicated chuck overlay (DCO). The major contributors on MMO are random and field component from overlay analysis. MMO is expected to be below 3nm by applying 18para CPETM(correction per exposure) and RegCTM(Registraion error correction). We consider High oder CPETM need to be developed for further improvement.
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Byoung-Hoon Lee, Inhwan Lee, Yoonsuk Hyun, SeoMin Kim, Chang-Moon Lim, Myoung Soo Kim, and Sung-ki Park "EUV overlay strategy for improving MMO", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90480R (17 April 2014); https://doi.org/10.1117/12.2048283
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