18 March 2014 EUV OPC modeling and correction requirements
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In this paper we discuss the EUV OPC modeling challenges and potential solutions, as well as OPC integration requirements to support the forthcoming application of EUV lithography. 10-nm-node OPC modeling is considered as an example. Wafer and mask process data were collected for calibration and verification patterns, to understand the mask making error/OPC model interactions. Several factors, including compact mask topography modeling impact, were analyzed by means of rigorous simulations and model fitting. This was performed on a large-scale data set, to ensure accurate characterization of the OPC modeling strategies, using a large number of patterns.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tamer H. Coskun, Tamer H. Coskun, Tom Wallow, Tom Wallow, Gek Soon Chua, Gek Soon Chua, Keith Standiford, Keith Standiford, Craig Higgins, Craig Higgins, Yi Zou, Yi Zou, "EUV OPC modeling and correction requirements", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90480W (18 March 2014); doi: 10.1117/12.2046341; https://doi.org/10.1117/12.2046341


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