17 April 2014 Relationship between resist outgassing and EUV witness sample contamination in NXE outgas qualification using electrons and EUV photons
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EUV photoresists are considered as a potential source of optics contamination, since they introduce irradiation-induced outgassing in the EUV vacuum environment. Therefore, before these resists can be used on e.g. ASML NXE:3100 or NXE:3300, they need to be tested in dedicated equipment according to a well-defined procedure, which is based on exposing a witness sample (WS) in the vicinity of a simultaneously exposed resist as it outgasses. Different system infrastructures are used at multiple sites (e.g. NIST, CNSE, Sematech, EIDEC, and imec) and were calibrated to each other by a detailed test plan. Despite this detailed tool qualifications, a first round robin comparison of identical materials showed inconsistent outgas test results, and required further investigation by a second round robin. Since the resist exposure mode is different at the various locations (some sites are using EUV photons while others use E-gun electrons), this difference has always a point of concern for variability of test results. In this work we compare the outgas test results from EUV photon and electron exposure using the resist materials of the second round robin. Since the imec outgas tester allows both exposure methods on the resist, a within-system comparison is possible and showed limited variation between photon and electron exposure mode. Therefore the system-to-system variability amongst the different outgas test sites is expected to be related to other parameters than the electron/photon exposure mode. Initial work showed that the variability might be related to temperature, E-gun emission excursion, and/or residual outgassing scaled by different wafer areas at the different sites.
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I. Pollentier, I. Pollentier, A. Tirumala Venkata, A. Tirumala Venkata, R. Gronheid, R. Gronheid, "Relationship between resist outgassing and EUV witness sample contamination in NXE outgas qualification using electrons and EUV photons", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481B (17 April 2014); doi: 10.1117/12.2047380; https://doi.org/10.1117/12.2047380

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