17 April 2014 Increasing sensitivity of oxide nanoparticle photoresists
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Abstract
Previous investigations on the patterning mechanism of nanoparticle photoresists provided insight into ligand displacement exerting a controlling influence on dissolution behavior of nanoparticles in organic developers. Nanoparticle core-ligand interaction which dictates ligand displacement would ultimately translate to the sensitivity of the photoresist. The current study investigates enhancement of resist sensitivity via altering the core-ligand interaction of the nanoparticle, which further emphasizes our proposed patterning hypothesis.
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Souvik Chakrabarty, Souvik Chakrabarty, Chandra Sarma, Chandra Sarma, Li Li, Li Li, Emmanuel P. Giannelis, Emmanuel P. Giannelis, Christopher K. Ober, Christopher K. Ober, } "Increasing sensitivity of oxide nanoparticle photoresists", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481C (17 April 2014); doi: 10.1117/12.2046555; https://doi.org/10.1117/12.2046555
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