17 April 2014 Increasing sensitivity of oxide nanoparticle photoresists
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Previous investigations on the patterning mechanism of nanoparticle photoresists provided insight into ligand displacement exerting a controlling influence on dissolution behavior of nanoparticles in organic developers. Nanoparticle core-ligand interaction which dictates ligand displacement would ultimately translate to the sensitivity of the photoresist. The current study investigates enhancement of resist sensitivity via altering the core-ligand interaction of the nanoparticle, which further emphasizes our proposed patterning hypothesis.
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Souvik Chakrabarty, Souvik Chakrabarty, Chandra Sarma, Chandra Sarma, Li Li, Li Li, Emmanuel P. Giannelis, Emmanuel P. Giannelis, Christopher K. Ober, Christopher K. Ober, "Increasing sensitivity of oxide nanoparticle photoresists", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481C (17 April 2014); doi: 10.1117/12.2046555; https://doi.org/10.1117/12.2046555

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