Electron and hole transfer in anion-bound chemically amplified resists used in extreme ultraviolet lithography

Yoshitaka Komuro; Hiroki Yamamoto; Yoshiyuki Utsumi; Katsumi Ohmori; Takahiro Kozawa

doi:10.1117/12.2046627

17 April 2014 Electron and hole transfer in anion-bound chemically amplified resists used in extreme ultraviolet lithography

Yoshitaka Komuro, Hiroki Yamamoto, Yoshiyuki Utsumi, Katsumi Ohmori, Takahiro Kozawa

Author Affiliations +

Proceedings Volume 9048, Extreme Ultraviolet (EUV) Lithography V; 90481F (2014) https://doi.org/10.1117/12.2046627
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

The uniformity of acid generator distribution and the length of acid diffusion are serious problems in the development of resist materials used for the 16nm node and below. Anion-bound polymers in which the anion part of onium salts is polymerized have attracted much attention for solving these problems. In this study, the reaction mechanism of an anion-bound polymer in cyclohexanone was clarified using pulse radiolysis. The design of an efficient electron and hole transfer system is essential to the enhancement of resist performance.

Citation Download Citation

Yoshitaka Komuro, Hiroki Yamamoto, Yoshiyuki Utsumi, Katsumi Ohmori, and Takahiro Kozawa "Electron and hole transfer in anion-bound chemically amplified resists used in extreme ultraviolet lithography", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481F (17 April 2014); https://doi.org/10.1117/12.2046627

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