17 April 2014 Electron and hole transfer in anion-bound chemically amplified resists used in extreme ultraviolet lithography
Author Affiliations +
Abstract
The uniformity of acid generator distribution and the length of acid diffusion are serious problems in the development of resist materials used for the 16nm node and below. Anion-bound polymers in which the anion part of onium salts is polymerized have attracted much attention for solving these problems. In this study, the reaction mechanism of an anion-bound polymer in cyclohexanone was clarified using pulse radiolysis. The design of an efficient electron and hole transfer system is essential to the enhancement of resist performance.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshitaka Komuro, Yoshitaka Komuro, Hiroki Yamamoto, Hiroki Yamamoto, Yoshiyuki Utsumi, Yoshiyuki Utsumi, Katsumi Ohmori, Katsumi Ohmori, Takahiro Kozawa, Takahiro Kozawa, } "Electron and hole transfer in anion-bound chemically amplified resists used in extreme ultraviolet lithography", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481F (17 April 2014); doi: 10.1117/12.2046627; https://doi.org/10.1117/12.2046627
PROCEEDINGS
8 PAGES


SHARE
Back to Top