17 April 2014 Electron and hole transfer in anion-bound chemically amplified resists used in extreme ultraviolet lithography
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Abstract
The uniformity of acid generator distribution and the length of acid diffusion are serious problems in the development of resist materials used for the 16nm node and below. Anion-bound polymers in which the anion part of onium salts is polymerized have attracted much attention for solving these problems. In this study, the reaction mechanism of an anion-bound polymer in cyclohexanone was clarified using pulse radiolysis. The design of an efficient electron and hole transfer system is essential to the enhancement of resist performance.
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Yoshitaka Komuro, Hiroki Yamamoto, Yoshiyuki Utsumi, Katsumi Ohmori, Takahiro Kozawa, "Electron and hole transfer in anion-bound chemically amplified resists used in extreme ultraviolet lithography", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481F (17 April 2014); doi: 10.1117/12.2046627; https://doi.org/10.1117/12.2046627
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