Comparative analysis of shot noise in EUV and e-beam lithography

Suchit Bhattarai; Weilun Chao; Andrew R. Neureuther; Patrick P. Naulleau

doi:10.1117/12.2048248

17 April 2014 Comparative analysis of shot noise in EUV and e-beam lithography

Suchit Bhattarai, Weilun Chao, Andrew R. Neureuther, Patrick P. Naulleau

Proceedings Volume 9048, Extreme Ultraviolet (EUV) Lithography V; 90481H (2014) https://doi.org/10.1117/12.2048248
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Gray-scale e-beam lithography has been performed to match the EUV and e-beam aerial image log slope for studying shot noise fundamentals in the two mechanisms through line-edge roughness (LER) measurements for 50 nm lines and spaces patterned on a leading chemically amplified EUV resist. The measured e-beam exposure latitude decreased from 0.4 with binary patterning to 0.28 with gray-scale e-beam exposure designed to match the EUV incident image profile, closely matching the EUV exposure latitude of 0.26. Calculations of absorption statistics with EUV and e-beam suggest that the shot noise with e-beam patterning is expected to be 10% larger than the shot noise with EUV patterning. However, despite the matched image gradients and close to identical absorbed quanta predictions, the e-beam patterned LER is 2.5× larger than the EUV patterned LER.

Citation Download Citation

Suchit Bhattarai, Weilun Chao, Andrew R. Neureuther, and Patrick P. Naulleau "Comparative analysis of shot noise in EUV and e-beam lithography", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481H (17 April 2014); https://doi.org/10.1117/12.2048248

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