17 April 2014 Update on the SEMATECH 0.5 NA Extreme-Ultraviolet Lithography (EUVL) Microfield Exposure Tool (MET)
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Abstract
In support of the Extreme Ultraviolet Lithography (EUVL) roadmap, a SEMATECH/CNSE joint program is underway to produce multiple EUVL (wavelength of 13.5 nm) R&D photolithography tools. The 0.5 NA projection optic magnification (5X), track length and mechanical interfaces match the currently installed 0.3 NA micro-field exposure tools (MET) projection optic [1] [2] [3]. Therefore, significant changes to the current tool platforms and other adjacent modules are not necessary. However, many of the existing systems do need upgrades to achieve the anticipated smaller exposure feature sizes [4]. To date we have made considerable progress in the production of the first of the two-mirror 0.5 NA projection optics for EUVL [5]. With a measured transmitted wave front error of less than 1 nm root mean square (RMS) over its 30 μm × 200 μm image field, lithography modeling shows that a predicted resolution of ≤12 nm and an ultimate resolution of 8 nm (with extreme dipole illumination) will be possible.

This paper will present an update from the 0.5 NA EUVL program. We will detail the more significant activities that are being undertaken to upgrade the MET and discuss expected performance.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kevin Cummings, Dominic Ashworth, Mark Bremer, Rodney Chin, Yu-Jen Fan, Luc Girard, Holger Glatzel, Michael Goldstein, Eric Gullikson, Jim Kennon, Bob Kestner, Lou Marchetti, Patrick Naulleau, Regina Soufli, Johannes Bauer, Markus Mengel, Joachim Welker, Michael Grupp, Erik Sohmen, Stefan Wurm, "Update on the SEMATECH 0.5 NA Extreme-Ultraviolet Lithography (EUVL) Microfield Exposure Tool (MET)", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481M (17 April 2014); doi: 10.1117/12.2046380; https://doi.org/10.1117/12.2046380
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