17 April 2014 Driving the industry towards a consensus on high numerical aperture (high-NA) extreme ultraviolet (EUV)
Author Affiliations +
Proceedings Volume 9048, Extreme Ultraviolet (EUV) Lithography V; 90481O (2014); doi: 10.1117/12.2048397
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States
High numerical aperture (high-NA) extreme ultraviolet (EUV) is one option to enable a higher resolution than EUV can achieve with single patterning. An industry effort to achieve consensus on the key parameters of high-NA EUV is described. At high-NA, three-dimensional (3D) mask effects cause a loss of contrast in the image that is recovered by increasing the scanner de-magnification. This leads to a tradeoff between wafer field and mask size that has considerable impact on mask cost and scanner cost of ownership.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick A. Kearney, Obert Wood, Eric Hendrickx, Greg McIntyre, Soichi Inoue, Frank Goodwin, Stefan Wurm, Jan van Schoot, Winfried Kaiser, "Driving the industry towards a consensus on high numerical aperture (high-NA) extreme ultraviolet (EUV)", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481O (17 April 2014); doi: 10.1117/12.2048397; https://doi.org/10.1117/12.2048397


Novel EUV mask black border and its impact on wafer...
Proceedings of SPIE (March 18 2016)
Overview of extreme ultraviolet lithography
Proceedings of SPIE (December 07 1994)
Out of band radiation effects on resist patterning
Proceedings of SPIE (April 07 2011)
3D mask modeling for EUV lithography
Proceedings of SPIE (March 23 2012)

Back to Top