17 April 2014 Driving the industry towards a consensus on high numerical aperture (high-NA) extreme ultraviolet (EUV)
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Abstract
High numerical aperture (high-NA) extreme ultraviolet (EUV) is one option to enable a higher resolution than EUV can achieve with single patterning. An industry effort to achieve consensus on the key parameters of high-NA EUV is described. At high-NA, three-dimensional (3D) mask effects cause a loss of contrast in the image that is recovered by increasing the scanner de-magnification. This leads to a tradeoff between wafer field and mask size that has considerable impact on mask cost and scanner cost of ownership.
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Patrick A. Kearney, Patrick A. Kearney, Obert Wood, Obert Wood, Eric Hendrickx, Eric Hendrickx, Greg McIntyre, Greg McIntyre, Soichi Inoue, Soichi Inoue, Frank Goodwin, Frank Goodwin, Stefan Wurm, Stefan Wurm, Jan van Schoot, Jan van Schoot, Winfried Kaiser, Winfried Kaiser, } "Driving the industry towards a consensus on high numerical aperture (high-NA) extreme ultraviolet (EUV)", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481O (17 April 2014); doi: 10.1117/12.2048397; https://doi.org/10.1117/12.2048397
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