24 April 2014 High-resist sensitization by pattern and flood combination lithography
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Abstract
In EUV lithography (EUVL), the most critical issue has been low intensity of the EUV light source. Light-source intensity and resist sensitivity have a complementary relationship. Therefore, the sensitization of EUV resist is very important to compensate the low intensity of the EUV light source. However, dramatically improving the resist sensitivity of chemically amplified resist (CAR) is very difficult because of the resolution/line-width roughness/sensitivity (RLS) trade-off. Therefore, we propose a very new process: high resist sensitization by the combination lithography of EUV or EB pattern exposure with UV flood exposure (PF combination lithography) of photosensitized chemically amplified resist (PS-CAR). The combination lithography of EB pattern exposure with UV flood exposure achieved a sensitivity enhancement of more than a factor of 10 with respect to conventional EB single-exposure lithography, without loss in space resolution of line/space of 75 nm1. The breakthrough of RLS trade-off by PF combination lithography of PS-CAR is explained based on RLS trade-off simulation method2 and acid generation mechanism of PF combination lithography of PS-CAR. One of the problems of the PF combination lithography of PS-CAR is postexposure delay (PED) effects suffered from airborne contamination. The present paper describes forming of 75 nm contact hole and PED effects in the PF combination lithography of PS-CAR. The sensitization of EUV resists by new method accelerates EUVL implementation.
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Seiichi Tagawa, Seiichi Tagawa, Akihiro Oshima, Akihiro Oshima, Satoshi Enomoto, Satoshi Enomoto, C. Q. Dinh, C. Q. Dinh, } "High-resist sensitization by pattern and flood combination lithography", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481S (24 April 2014); doi: 10.1117/12.2046790; https://doi.org/10.1117/12.2046790
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