17 April 2014 Design and synthesis of novel resist materials for EUVL
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Abstract
The design, synthesis and characterization of non-chemically amplified negative tone electron-beam and EUV resists based on the inclusion of a radiation sensitive sulfonium functional group are outlined.. MAPDST (4-(methacryloyloxy phenyldimethylsulfoniumtriflate) and MANTMS (1-(4-(methacryloyloxy)naphthalen-1-yl)tetrahydro-1H thiopheniumtrifluoromethane sulfonate) monomers each containing the sulfonium group underwent homo- and copolymerizations using free radical polymerization with 2,2'-azobisisobutyronitrile (AIBN) initiator. These resist materials were evaluated by EB lithography using 20 keV electron beam and EUV lithography to obtain sub-20 nm line patterns. These features were optimized ranging from resist coating, pre-exposure bake, exposure to e-beam, postexposure bake, development and imaging. Our investigation showed that these newly synthesized resists are potential viable candidates for EUV lithography based on their ability to form flaw free thin films < 50nm, sensitivity, resolution and LER control.
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V. S. V. Satyanarayana, Vikram Singh, Subrata Ghosh, Satinder Sharma, Kenneth E. Gonsalves, "Design and synthesis of novel resist materials for EUVL", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481W (17 April 2014); doi: 10.1117/12.2045736; https://doi.org/10.1117/12.2045736
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