17 April 2014 Design and synthesis of novel resist materials for EUVL
Author Affiliations +
The design, synthesis and characterization of non-chemically amplified negative tone electron-beam and EUV resists based on the inclusion of a radiation sensitive sulfonium functional group are outlined.. MAPDST (4-(methacryloyloxy phenyldimethylsulfoniumtriflate) and MANTMS (1-(4-(methacryloyloxy)naphthalen-1-yl)tetrahydro-1H thiopheniumtrifluoromethane sulfonate) monomers each containing the sulfonium group underwent homo- and copolymerizations using free radical polymerization with 2,2'-azobisisobutyronitrile (AIBN) initiator. These resist materials were evaluated by EB lithography using 20 keV electron beam and EUV lithography to obtain sub-20 nm line patterns. These features were optimized ranging from resist coating, pre-exposure bake, exposure to e-beam, postexposure bake, development and imaging. Our investigation showed that these newly synthesized resists are potential viable candidates for EUV lithography based on their ability to form flaw free thin films < 50nm, sensitivity, resolution and LER control.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. S. V. Satyanarayana, V. S. V. Satyanarayana, Vikram Singh, Vikram Singh, Subrata Ghosh, Subrata Ghosh, Satinder Sharma, Satinder Sharma, Kenneth E. Gonsalves, Kenneth E. Gonsalves, } "Design and synthesis of novel resist materials for EUVL", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481W (17 April 2014); doi: 10.1117/12.2045736; https://doi.org/10.1117/12.2045736

Back to Top