17 April 2014 Evaluations of negative tone development resist and process for EUV lithography
Author Affiliations +
Resists, underlayers, and new rinse processes were evaluated for negative tone development (NTD) using extreme ultraviolet (EUV) lithography. The most recently developed resists show resolution and sensitivity improvements. High remaining-film thickness was also achieved for better etching resistance. The underlayers smoothed the line width roughness (LWR) and prevented pattern collapse. In addition, the proposed NTD-compatible rinse process further assisted to prevent pattern collapse. The best NTD performance at EIDEC till date was achieved: 22 nm line and space (L/S) resolution, 5.4 nm LWR, and 16.8 mJ/cm2 sensitivity with annular illumination for a small-field exposure tool (SFET). Furthermore, an ultimate resolution of 17 nm L/S was achieved with x-dipole illumination of SFET. The lithographic performance of the best NTD resist is comparable to the typical positive tone development resist.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshiya Takahashi, Toshiya Takahashi, Noriaki Fujitani, Noriaki Fujitani, Toshiro Itani, Toshiro Itani, } "Evaluations of negative tone development resist and process for EUV lithography", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90482C (17 April 2014); doi: 10.1117/12.2046175; https://doi.org/10.1117/12.2046175

Back to Top