17 April 2014 Evaluations of negative tone development resist and process for EUV lithography
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Resists, underlayers, and new rinse processes were evaluated for negative tone development (NTD) using extreme ultraviolet (EUV) lithography. The most recently developed resists show resolution and sensitivity improvements. High remaining-film thickness was also achieved for better etching resistance. The underlayers smoothed the line width roughness (LWR) and prevented pattern collapse. In addition, the proposed NTD-compatible rinse process further assisted to prevent pattern collapse. The best NTD performance at EIDEC till date was achieved: 22 nm line and space (L/S) resolution, 5.4 nm LWR, and 16.8 mJ/cm2 sensitivity with annular illumination for a small-field exposure tool (SFET). Furthermore, an ultimate resolution of 17 nm L/S was achieved with x-dipole illumination of SFET. The lithographic performance of the best NTD resist is comparable to the typical positive tone development resist.
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Toshiya Takahashi, Toshiya Takahashi, Noriaki Fujitani, Noriaki Fujitani, Toshiro Itani, Toshiro Itani, "Evaluations of negative tone development resist and process for EUV lithography", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90482C (17 April 2014); doi: 10.1117/12.2046175; https://doi.org/10.1117/12.2046175

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