17 April 2014 Study of angular effects for optical systems into the EUV
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Abstract
As EUV lithography attempts to outperform other lithographical methods to the sub-14 nm node, the demand for a larger NA traditionally dominates the drive for scaling. There are, however, many challenges to overcome in order to accomplish this [1]. Due to the reflective optics in EUV systems, angular effects of oblique illumination, and non-zero chief ray angle at the objective (CRAO), must be carefully considered and will need to be well understood if high-NA EUV is to be successful. This study investigates impact on of the bias between horizontal and vertical feature CD, image placement error and NILS. Effects of sidewall absorber angle, absorption coefficient (k) and absorber thickness are observed through pitch with various source shapes in an EUV lithography system.
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Andrew Burbine, Zac Levinson, Anthony Schepis, Bruce W. Smith, "Study of angular effects for optical systems into the EUV", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90482N (17 April 2014); doi: 10.1117/12.2046488; https://doi.org/10.1117/12.2046488
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