17 April 2014 The factors affecting improvement sensitivity, CDU, and resolution in EUV resist
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The minimum target specificatons of EUV resist material are the resolution < 30nm half pitch C/H, CDU < 3.0nm, and sensitivity < 20mJ. The major pending issue of EUV resist is how to simultaneously achieve high sensitivity, high resolution and low CD Uniformity (CDU). Thus, we have studied that which factors such as acid diffusion, solvents, polymer platform and film density etc are affecting to improve CDU, sensitivity and resolution. Especially, CDU and sensitivity are the main issues among above these performances. With the results of these experiments, we could determine polymer blend PAG as polymer platform for EUV resist material. We have also researched polymer to improve the sensitivity and CDU with variation of molecular weight, poly dispersity and monomer feed ratio. Additionally, we have studied the effects of resist solvents and film density. And we have measured the outgas of our EUV resist. In this paper, we will discuss the results of these studies obtained by EUV tools of SEMATECH.
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Joonhee Han, Joonhee Han, Hyun Soon Lim, Hyun Soon Lim, Jin Ho Kim, Jin Ho Kim, Sumi Choi, Sumi Choi, Jin Bong Shin, Jin Bong Shin, Chang Wan Bae, Chang Wan Bae, In Young Yoo, In Young Yoo, Bong Ha Shin, Bong Ha Shin, Eun Kyo Lee, Eun Kyo Lee, Hyun Sang Joo, Hyun Sang Joo, Dong Chul Seo, Dong Chul Seo, Jun Sung Chun, Jun Sung Chun, "The factors affecting improvement sensitivity, CDU, and resolution in EUV resist", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90482R (17 April 2014); doi: 10.1117/12.2046573; https://doi.org/10.1117/12.2046573


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