17 April 2014 193nm inspection of extreme ultraviolet mask absorber defect
Author Affiliations +
Abstract
193 nm inspection for various defect types on top of the extreme-ultraviolet (EUV) mask is studied. The antireflection coating (ARC) is tried to enhance the defect inspection. However, adding ARC is not helpful to increase the sensitivity. Thus, 2 nm TaBO generally used for preventing the oxidation is mainly used. The aerial image deformation caused by the defect is compared to that of the defect free mask. Peak intensity difference is quantized and the sensitivity that is comparable to the ITRS defect inspection limit is chosen. The inspection criterion for typical defect types of extrusion, intrusion, pindot and pinhole is compared.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guk-Jin Kim, Guk-Jin Kim, In-Seon Kim, In-Seon Kim, Michael Yeung, Michael Yeung, Chang-Moon Lim, Chang-Moon Lim, Hye-Keun Oh, Hye-Keun Oh, } "193nm inspection of extreme ultraviolet mask absorber defect", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90482S (17 April 2014); doi: 10.1117/12.2046587; https://doi.org/10.1117/12.2046587
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT

Actinic detection of EUVL mask blank defects
Proceedings of SPIE (December 18 1998)
Integration of antireflection coatings on EUV absorber stacks
Proceedings of SPIE (December 27 2002)
Defect printability and inspection of EUVL mask
Proceedings of SPIE (December 06 2004)
Actinic EUV-mask metrology: tools, concepts, components
Proceedings of SPIE (April 01 2011)
Actinic inspection of sub-50 nm EUV mask blank defects
Proceedings of SPIE (May 03 2007)

Back to Top