17 April 2014 Predicting LER PSD caused by mask roughness using a mathematical model
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EUV masks have replicated multilayer roughness from the substrate or the deposition process which cause line edge roughness (LER) during imaging. We have developed a model, based on the assumption that the roughness is small, that is able to analytically calculate the LER and LER Power Spectral Density (PSD) for any illumination source, defocus, and pitch. We evaluated the model for typical mask roughness values and varied illumination and other parameters to determine how the roughness induced LER behaves under different imaging conditions.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rene A. Claus, Rene A. Claus, Andrew R. Neureuther, Andrew R. Neureuther, Laura Waller, Laura Waller, Patrick P. Naulleau, Patrick P. Naulleau, "Predicting LER PSD caused by mask roughness using a mathematical model", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90482X (17 April 2014); doi: 10.1117/12.2046637; https://doi.org/10.1117/12.2046637


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