28 March 2014 Towards electrical testable SOI devices using Directed Self-Assembly for fin formation
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Abstract
The first fully integrated SOI device using 42nm-pitch directed self-assembly (DSA) process for fin formation has been demonstrated in a 300mm pilot line environment. Two major issues were observed and resolved in the fin formation process. The cause of the issues and process optimization are discussed. The DSA device shows comparable yield with slight short channel degradation which is a result of a large fin CD when compared to the devices made by baseline process. LER/LWR analysis through the DSA process implied that the 42nm-pitch DSA process may not have reached the thermodynamic equilibrium. Here, we also show preliminary results from using scatterometry to detect DSA defects before removing one of the blocks in BCP.
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Chi-Chun Liu, Chi-Chun Liu, Cristina Estrada-Raygoza, Cristina Estrada-Raygoza, Hong He, Hong He, Michael Cicoria, Michael Cicoria, Vinayak Rastogi, Vinayak Rastogi, Nihar Mohanty, Nihar Mohanty, Hsinyu Tsai, Hsinyu Tsai, Anthony Schepis, Anthony Schepis, Kafai Lai, Kafai Lai, Robin Chao, Robin Chao, Derrick Liu, Derrick Liu, Michael Guillorn, Michael Guillorn, Jason Cantone, Jason Cantone, Sylvie Mignot, Sylvie Mignot, Ryoung-Han Kim, Ryoung-Han Kim, Joy Cheng, Joy Cheng, Melia Tjio, Melia Tjio, Akiteru Ko, Akiteru Ko, David Hetzer, David Hetzer, Mark Somervell, Mark Somervell, Matthew Colburn, Matthew Colburn, } "Towards electrical testable SOI devices using Directed Self-Assembly for fin formation", Proc. SPIE 9049, Alternative Lithographic Technologies VI, 904909 (28 March 2014); doi: 10.1117/12.2046462; https://doi.org/10.1117/12.2046462
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