28 March 2014 Challenges for pattern formation with sub-100nm residual-layer thickness by roll-to-roll nanoimprint lithography
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Abstract
Technologies for pattern fabrication on a flexible substrate are being developed for various flexible devices. A patterning technique for a smaller pattern of the order of sub-100 nm will be needed in the near future. Roll-to-roll Nano-Imprint Lithography (RtR-NIL) is a promising candidate for extremely low-cost fabrication of large-area devices in large volumes. A residual layer thickness (RLT) of a pattern transferred by RtR-NIL distributes at around several micrometers or more. We tried to thin the RLT below 100 nm and confirmed the controllability of the RLT and its deviation in the patterned sample.
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Ryoichi Inanami, Ryoichi Inanami, Kazuto Matsuki, Kazuto Matsuki, Tomoko Ojima, Tomoko Ojima, Takuya Kono, Takuya Kono, Tetsuro Nakasugi, Tetsuro Nakasugi, } "Challenges for pattern formation with sub-100nm residual-layer thickness by roll-to-roll nanoimprint lithography", Proc. SPIE 9049, Alternative Lithographic Technologies VI, 90490I (28 March 2014); doi: 10.1117/12.2046248; https://doi.org/10.1117/12.2046248
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