28 March 2014 Evaluation of integration schemes for contact-hole grapho-epitaxy DSA: a study of substrate and template affinity control
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Abstract
An electrical test vehicle for fabricating direct self-assembly (DSA) sub-30 nm via interconnects has been fabricated employing a soft mask grapho-epitaxy contact-hole shrink. The generation of the resist pre-pattern was carried out using 193i lithography on three different stacks and the BCP assembly was evaluated with and without template affinity control on the resist pre-pattern. After DSA shrink, the holes were transferred in a 100 nm oxide for standard Tungsten metallization for electrical characterization.
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A. Romo-Negreira, A. Romo-Negreira, T. R. Younkin, T. R. Younkin, R. Gronheid, R. Gronheid, S. Demuynck, S. Demuynck, N. Vandenbroeck, N. Vandenbroeck, T. Seo, T. Seo, D. J. Guerrero, D. J. Guerrero, D. Parnell, D. Parnell, M. Muramatsu, M. Muramatsu, S. Kawakami, S. Kawakami, T. Yamauchi, T. Yamauchi, K. Nafus, K. Nafus, M. H. Somervell, M. H. Somervell, } "Evaluation of integration schemes for contact-hole grapho-epitaxy DSA: a study of substrate and template affinity control", Proc. SPIE 9049, Alternative Lithographic Technologies VI, 90491L (28 March 2014); doi: 10.1117/12.2046119; https://doi.org/10.1117/12.2046119
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