A single-nanometer nanoimprint-mask fabrication by EB lithography followed by nanoimprinting and self-aligned double-patterning

Hideo Kobayashi; Kouta Suzuki; Hiromasa Iyama; Shuji Kishimoto; Takeshi Kagatsume; Takashi Sato; Tsuyoshi Watanabe

doi:10.1117/12.2050012

28 March 2014 A single-nanometer nanoimprint-mask fabrication by EB lithography followed by nanoimprinting and self-aligned double-patterning

Hideo Kobayashi, Kouta Suzuki, Hiromasa Iyama, Shuji Kishimoto, Takeshi Kagatsume, Takashi Sato, Tsuyoshi Watanabe

Author Affiliations +

Proceedings Volume 9049, Alternative Lithographic Technologies VI; 90491R (2014) https://doi.org/10.1117/12.2050012
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

As a new scheme of a master-mold (imprint-mask) fabrication, half pitch (hp) 12nm lines and spaces (L/S) pattern was fabricated from hp 24nm L/S resist mandrels, which was prepared by EB writing as well as nanoimprinting, and followed by self-aligned double-pattering (SADP) technique. It was observed that line width roughness (LWR, 3 sigma value) was reduced and improved by a single and multiple nanoimprinting to make hp24nm resist mandrels in the new scheme. We have studied the phenomena and then revealed that the resist patterns of nanoimprinting had more sharp and smooth shoulders as well as bottom edges than EB resist patterns. Those seemed to be reflected to better LWR and LWR reduction by nanoimprinting. The new scheme has advantages of resolution enhancement and better pattern quality of LWR on a mold (mask) for nanoimprint lithography, with comparing to a conventional and single EB lithography.

Citation Download Citation

Hideo Kobayashi, Kouta Suzuki, Hiromasa Iyama, Shuji Kishimoto, Takeshi Kagatsume, Takashi Sato, and Tsuyoshi Watanabe "A single-nanometer nanoimprint-mask fabrication by EB lithography followed by nanoimprinting and self-aligned double-patterning", Proc. SPIE 9049, Alternative Lithographic Technologies VI, 90491R (28 March 2014); https://doi.org/10.1117/12.2050012

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