28 March 2014 A single-nanometer nanoimprint-mask fabrication by EB lithography followed by nanoimprinting and self-aligned double-patterning
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Abstract
As a new scheme of a master-mold (imprint-mask) fabrication, half pitch (hp) 12nm lines and spaces (L/S) pattern was fabricated from hp 24nm L/S resist mandrels, which was prepared by EB writing as well as nanoimprinting, and followed by self-aligned double-pattering (SADP) technique. It was observed that line width roughness (LWR, 3 sigma value) was reduced and improved by a single and multiple nanoimprinting to make hp24nm resist mandrels in the new scheme. We have studied the phenomena and then revealed that the resist patterns of nanoimprinting had more sharp and smooth shoulders as well as bottom edges than EB resist patterns. Those seemed to be reflected to better LWR and LWR reduction by nanoimprinting. The new scheme has advantages of resolution enhancement and better pattern quality of LWR on a mold (mask) for nanoimprint lithography, with comparing to a conventional and single EB lithography.
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Hideo Kobayashi, Hideo Kobayashi, Kouta Suzuki, Kouta Suzuki, Hiromasa Iyama, Hiromasa Iyama, Shuji Kishimoto, Shuji Kishimoto, Takeshi Kagatsume, Takeshi Kagatsume, Takashi Sato, Takashi Sato, Tsuyoshi Watanabe, Tsuyoshi Watanabe, } "A single-nanometer nanoimprint-mask fabrication by EB lithography followed by nanoimprinting and self-aligned double-patterning", Proc. SPIE 9049, Alternative Lithographic Technologies VI, 90491R (28 March 2014); doi: 10.1117/12.2050012; https://doi.org/10.1117/12.2050012
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