28 March 2014 Defect-aware process margin for chemo-epitaxial directed self-assembly lithography using simulation method based on self-consistent field theory
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Abstract
We proposed a new concept of “defect-aware process margin.” Defect-aware process margin was evaluated by investigating the energy difference between the free-energy of the most stable state and that of the first metastable state. The energy difference is strongly related to the defect density in DSA process. As a result of our rigorous simulations, the process margin of the pinning layer width was found to be: (1) worse when the pinning layer affinity is too large, (2) better when the background affinity has the opposite sign of the pinning layer affinity, and (3) better when the top of the background layer is higher than that of the pinning layer by 0.1L0.
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Katsuyoshi Kodera, Katsuyoshi Kodera, Hironobu Sato, Hironobu Sato, Hideki Kanai, Hideki Kanai, Yuriko Seino, Yuriko Seino, Naoko Kihara, Naoko Kihara, Yusuke Kasahara, Yusuke Kasahara, Katsutoshi Kobayashi, Katsutoshi Kobayashi, Ken Miyagi, Ken Miyagi, Shinya Minegishi, Shinya Minegishi, Koichi Yatsuda, Koichi Yatsuda, Tomoharu Fujiwara, Tomoharu Fujiwara, Noriyuki Hirayanagi, Noriyuki Hirayanagi, Yoshiaki Kawamonzen, Yoshiaki Kawamonzen, Tsukasa Azuma, Tsukasa Azuma, } "Defect-aware process margin for chemo-epitaxial directed self-assembly lithography using simulation method based on self-consistent field theory", Proc. SPIE 9049, Alternative Lithographic Technologies VI, 904926 (28 March 2014); doi: 10.1117/12.2046159; https://doi.org/10.1117/12.2046159
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