Influence of metrology error in measurement of line edge roughness power spectral density

Benjamin D. Bunday; Chris A. Mack

doi:10.1117/12.2047100

14 April 2014 Influence of metrology error in measurement of line edge roughness power spectral density

Benjamin D. Bunday, Chris A. Mack

Author Affiliations +

Proceedings Volume 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII; 90500G (2014) https://doi.org/10.1117/12.2047100
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Line-edge roughness (LER) and linewidth roughness (LWR) in lithography are best characterized by the roughness power spectrum density (PSD), or similar measures of roughness frequency and correlation. The PSD is generally thought to be described well by three parameters: standard deviation, correlation length, and roughness exponent. The next step toward enabling these metrics for pertinent industrial use is to understand how real metrology errors interact with these metrics and what should be optimized on the critical dimension scanning electron microscopy (CD-SEM) to improve error budgets. In this work, Java Monte Carlo Simulator of Secondary Electrons (JMONSEL) simulation is used to better understand how various SEM parameters, beam size/shape, and sample profile influence SEM line edge uncertainty and also some of the systematic shifts in edge location assignment. A thorough understanding of the impact of the SEM on the measurement results enables better measurement of LER PSD and better interpretation of measurement results.

Citation Download Citation

Benjamin D. Bunday and Chris A. Mack "Influence of metrology error in measurement of line edge roughness power spectral density", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90500G (14 April 2014); https://doi.org/10.1117/12.2047100

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