2 April 2014 Novel metrology methods for fast 3D characterization of directed self-assembly (DSA) patterns for high volume manufacturing
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Abstract
One of the major challenges associated with insertion of a directed self-assembly (DSA) patterning process in high volume manufacturing (HVM) is finding a non-destructive, yield-compatible, consistent critical dimension (CD) metrology process. Current CD scanning electron microscopy (CD-SEM) top-down approaches do not give the profile information for DSA patterns, which is paramount in determining the subsequent pattern transfer process (etch, for example). SEMATECH, in cooperation with some of the leaders of the metrology and DSA materials supply chain, has led an effort to address such metrology challenges in DSA. We have developed and evaluated several techniques (including a scatterometry-based method) that are potentially very attractive in determining DSA pattern profiles and have embedded bridging in such patterns without resorting to destructive cross-section imaging. We show how such processes could be fine-tuned to enable their insertion for DSA pattern characterization in an HVM environment.
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Chandra Sarma, Chandra Sarma, Benjamin Bunday, Benjamin Bunday, Aron Cepler, Aron Cepler, Ted Dziura, Ted Dziura, JiHoon Kim, JiHoon Kim, Guanyang Lin, Guanyang Lin, Jian Yin, Jian Yin, } "Novel metrology methods for fast 3D characterization of directed self-assembly (DSA) patterns for high volume manufacturing", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90500O (2 April 2014); doi: 10.1117/12.2046785; https://doi.org/10.1117/12.2046785
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