2 April 2014 Improving on-product performance at litho using integrated diffraction-based metrology and computationally designed device-like targets fit for advanced technologies (incl. FinFET)
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Abstract
In order to meet current and future node overlay, CD and focus requirements, metrology and process control performance need to be continuously improved. In addition, more complex lithography techniques, such as double patterning, advanced device designs, such as FinFET, as well as advanced materials like hardmasks, pose new challenges for metrology and process control. In this publication several systematic steps are taken to face these challenges.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kai-Hsiung Chen, GT Huang, KS Chen, C. W. Hsieh, YC Chen, CM Ke, TS Gau, YC Ku, Kaustuve Bhattacharyya, Jacky Huang, Arie den Boef, Maurits v. d. Schaar, Martijn Maassen, Reinder Plug, Youping Zhang, Steffen Meyer, Martijn van Veen, Chris de Ruiter, Jon Wu, Hua Xu, Tatung Chow, Charlie Chen, Eric Verhoeven, Pu Li, Paul Hinnen, Greet Storms, Kelvin Pao, Gary Zhang, Christophe Fouquet, and Takuya Mori "Improving on-product performance at litho using integrated diffraction-based metrology and computationally designed device-like targets fit for advanced technologies (incl. FinFET)", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90500S (2 April 2014); doi: 10.1117/12.2047098; https://doi.org/10.1117/12.2047098
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